Perovskite crystal grain size control, grain boundary passivation, and grain bridging are the keys to obtaining high efficiency in perovskite solar cells. A small amount of semiconducting single-walled carbon nanotubes added to a perovskite active layer can achieve this. In particular, the surfactants attached to the semiconducting single-walled carbon nanotubes a crucial role. In this work, we synthesized a new surfactant, 4,6-di(anthracen-9-yl)-1,3-phenylene bis(dimethylcarbamate), which has a polyaromatic group on one end and a urea-analogue carbamate group on the other end. The polyaromatic anthracene end functions as a nanotweezer clenching the carbon nanotubes strongly via π–π interaction while the carbamate end interacts with Pb²⁺, functioning as a strong Lewis base. In addition, the new surfactant has conjugated double bonds with a suitable bandgap, resulting in enhanced charge mobility in the perovskite film. Overall, the new surfactant-clenched semiconducting carbon nanotubes showcase superior effectiveness as passivators and charge bridges in perovskite solar cells as compared to the conventional deoxycholate surfactant-wrapped semiconducting single-walled carbon nanotubes. The new surfactant-attached semiconducting carbon nanotube-added NH₃CH₃PbI₃-based perovskite solar cells exhibited a power conversion efficiency of 20.7%, which is higher than that of the reference devices with no additives (18.4%) and the previously reported semiconducting single-walled carbon nanotube-added devices (19.7% in this work and 19.5% in the literature).

中文翻译：

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半导体碳纳米管上的聚芳族纳米镊子，用于太阳能电池中卤化钙钛矿晶体晶粒的生长和界面连接

钙钛矿晶体晶粒尺寸控制，晶界钝化和晶粒桥接是钙钛矿太阳能电池获得高效率的关键。添加到钙钛矿活性层中的少量半导体单壁碳纳米管可以实现此目的。特别地，表面活性剂附着在半导体单壁碳纳米管上至关重要。在这项工作中，我们合成了一种新的表面活性剂4,6-二（蒽-9-基）-1,3-亚苯基双（二甲基氨基甲酸酯），该表面活性剂的一端具有一个多芳族基团，而在其末端具有一个脲-类似氨基甲酸酯基团。另外一端。聚芳烃蒽端起纳米镊子的作用，通过π-π相互作用牢固地吸附碳纳米管，而氨基甲酸酯端与Pb ²⁺相互作用，具有强大的Lewis基础。另外，新的表面活性剂具有与合适的带隙共轭的双键，导致钙钛矿膜中电荷迁移率提高。总体而言，与传统的脱氧胆酸盐表面活性剂包裹的半导体单壁碳纳米管相比，新型表面活性剂裂解的半导体碳纳米管在钙钛矿太阳能电池中表现出优异的钝化剂和电荷桥功效。新型表面活性剂连接的半导体碳纳米管添加的NH ₃ CH ₃ PbI ₃钙钛矿型太阳能电池的功率转换效率为20.7％，高于没有添加剂的参考器件的功率转换效率（18.4％）和先前报道的半导体单壁碳纳米管添加器件的功率转换效率（这项工作的19.7％和文献中的19.5％）。