In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 °C–600 °C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and bulk β-Ga2O3 substrates. The layers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescence (CL) techniques. Most of the films exhibit growth features of hexagonal symmetry. Sn-doped Ga2O3 films exhibit n-type electrical conductivity. Heterojunctions composed of n-type hexagonal Ga2O3:Sn and p-type GaN:Mg demonstrate diode-like I-V characteristics and emit light under forward bias.

中文翻译：

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各种基材上ε-Ga ₂ O ₃薄膜的HVPE 生长和表征

在这项研究中，我们比较了在相同生长条件下通过卤化物气相外延 (HVPE) 在不同衬底上生长的氧化镓薄膜。氧化镓薄膜在 500 °C–600 °C 下沉积在基面 (0001) 平面和图案化蓝宝石衬底、(0001) 2H-GaN、4H-SiC 和体 β-Ga2O3 衬底上。通过 X 射线衍射 (XRD)、扫描电子显微镜 (SEM) 和阴极发光 (CL) 技术研究这些层。大多数薄膜表现出六边形对称的生长特征。Sn 掺杂的 Ga2O3 薄膜表现出 n 型导电性。由 n 型六方 Ga2O3:Sn 和 p 型 GaN:Mg 组成的异质结表现出类似二极管的 IV 特性，并在正向偏压下发光。