当前位置: X-MOL 学术ECS J. Solid State Sci. Technol. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Polystyrene/CeO 2 Core/Shell Abrasives for High-Quality 4H-SiC Surface in ECMP: The Effects of Shell Thickness
ECS Journal of Solid State Science and Technology ( IF 2.2 ) Pub Date : 2020-04-30 , DOI: 10.1149/2162-8777/ab8b71
B. Gao , W. J. Zhai , Q. Zhai , Y. Q. Shi

Polystyrene (PS)/CeO 2 core/shell abrasives with different shell thicknesses were synthesized and exploited to obtain high-quality 4H-SiC surface in electro-chemical mechanical polishing (ECMP). The synthesized PS/CeO 2 abrasives were observed by a scanning electron microscope (SEM); the results showed PS/CeO 2 with a similar core (200 nm) but different shell thicknesses (8.5, 15.5, 20.5 and 27.5 nm) were obtained. Young’s moduli of these abrasives were measured by an atomic force microscopy (AFM) considering the bottom deformation of abrasives. The effects of shell thickness on the contact area between the abrasive and the wafer surface, and on the indentation depth of the abrasive into the wafer surface were calculated. The indentation depth, representing surface quality, was compared with the surface roughness obtained from the following ECMP verification tests. The results characterized by a microscope and an AFM showed that surface quality poli...

中文翻译:

ECMP中用于高质量4H-SiC表面的聚苯乙烯/ CeO 2核/壳磨料:壳厚度的影响

合成了具有不同壳厚的聚苯乙烯(PS)/ CeO 2核/壳磨料,并利用它们在电化学机械抛光(ECMP)中获得了高质量的4H-SiC表面。用扫描电子显微镜(SEM)观察合成的PS / CeO 2磨料。结果表明,PS / CeO 2的核芯相似(200 nm),但壳厚度不同(8.5、15.5、20.5和27.5 nm)。考虑到磨料的底部变形,通过原子力显微镜(AFM)测量这些磨料的杨氏模量。计算了壳厚度对磨料和晶片表面之间的接触面积以及磨料进入晶片表面的压痕深度的影响。压痕深度代表表面质量,将其与通过以下ECMP验证测试获得的表面粗糙度进行比较。以显微镜和原子力显微镜为特征的结果表明,表面质量可以提高。
更新日期:2020-04-30
down
wechat
bug