Fabrication and characterization of metal/semiconductor/polymer/metal (MSP) heterojunction diode are reported. The Al/p-Si/P3HT/Ag MSP heterojunction have been manufactured by a homemade ultrasonic spray pyrolysis (USP) method, and the organic layer has a thickness of ∽150 nm and silver as front contact is deposited by physical vapor deposition (PVD) technique. The organic layer is deposited on glass and has been subject of XRD diffraction, patterns which revealed a grain size of ∽18 nm, UV–Vis measurement and scanning electron microscope (SEM) images characterization.

Furthermore, electrical parameters obtained from I–V current voltage and C–V capacitance voltage at room temperature and under dark conditions of the fabricated MSP heterojunction is investigated. The average series resistance Rs calculated from several methods is found to be 7.30 KΩ and are in close agreement for several calculation methods, also for ɸB the barrier height, n ideality factor with values of ∽0.72 eV and 4.07, respectively.

The peak of C–V occurs at a low frequency due to presence of interface inside organic MSP device.

报告了金属/半导体/聚合物/金属（MSP）异质结二极管的制备和表征。Al / p-Si / P3HT / Ag MSP异质结已通过自制的超声波喷雾热解（USP）方法制造，有机层的厚度为∽150nm，并且通过物理气相沉积（PVD）沉积了前接触层中的银）技术。有机层沉积在玻璃上，并进行了XRD衍射，图案显示出size18 nm的粒径，UV-Vis测量和扫描电子显微镜（SEM）图像表征。

此外，还研究了在室温下和在黑暗条件下制造的MSP异质结从I–V电流电压和C–V电容电压获得的电参数。通过多种方法计算得出的平均串联电阻Rs为7.30KΩ，与几种计算方法非常吻合，对于ɸB势垒高度，n理想系数分别为∽0.72eV和4.07。

由于有机MSP设备内部存在界面，因此C–V的峰值出现在低频。