Bootstrap capacitor in FET gate driver plays an important role in the transient performance of the half bridge configured synchronous buck DC‐DC converter especially in the top switch. In this paper, a new bootstrap capacitor based GaN‐FET driver is proposed. This new GaN‐FET driver is tested in a synchronous buck converter for performance verification like immunity, transient response, and voltage ringing. A comparison study with the existing LM5113 (Texas Instrument)–based driver for GaN‐FET and IR2110‐based Si‐MOSFET driver on a DC‐DC converter is carried out to show the performance improvement using the proposed GaN‐FET driver. The simulation study is performed on spice‐based NI‐Multisim 14.1. Finally, the designed GaN‐FET driver is tested on a 60‐W synchronous buck DC‐DC converter in open‐loop and closed‐loop configuration.

中文翻译：

---

使用基于L‐D的改进型GaN‐FET驱动器改善DC‐DC转换器的性能

FET栅极驱动器中的自举电容器在半桥配置的同步降压DC-DC转换器的瞬态性能中起着重要作用，尤其是在顶部开关中。本文提出了一种新的基于自举电容器的GaN-FET驱动器。这款新的GaN-FET驱动器已在同步降压转换器中进行了测试，以进行性能验证，例如抗扰性，瞬态响应和电压振铃。与现有的用于GaN-FET的基于LM5113（德州仪器）的驱动器和在DC-DC转换器上的基于IR2110的Si-MOSFET驱动器进行了比较研究，以表明使用所建议的GaN-FET驱动器可以提高性能。仿真研究是在基于香料的NI ‐ Multisim 14.1上进行的。 最后，在开环和闭环配置的60W同步降压DC-DC转换器上对设计的GaN-FET驱动器进行了测试。