In this paper, grounded and floating decremental/incremental memristor emulators have been proposed by using an operational transconductance amplifier (OTA), current differencing buffered amplifier (CDBA), and a grounded capacitor. The proposed memristor emulators are simpler in design over most of the realizations of memristor emulators available in the literature. The proposed configurations of grounded and floating decremental memristor emulators can be easily converted into grounded and floating incremental memristor emulators. The pinched hysteresis loops obtained from proposed memristor emulators are maintained up to 1‐MHz frequency in both decremental and incremental configurations. Simulation results have been obtained using a Mentor Graphics Eldo simulation tool in 0.18‐μm complementary metal‐oxide semiconductor (CMOS) technology parameters. Analog filters have also been designed to verify the performance of proposed grounded and floating memristor emulators.

中文翻译：

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使用OTA和CDBA的新型接地和浮动忆阻器仿真器

在本文中，已经提出了通过使用运算跨导放大器（OTA），电流差动缓冲放大器（CDBA）和接地电容器来实现接地和浮动的递增/递减忆阻器仿真器。与文献中可用的忆阻器仿真器的大多数实现相比，拟议的忆阻器仿真器的设计更为简单。接地和浮动增量忆阻器仿真器的建议配置可以轻松转换为接地和浮动增量忆阻器仿真器。从拟议的忆阻器仿真器获得的收缩磁滞回线在增量和增量配置中均保持高达1 MHz的频率。使用0的Mentor Graphics Eldo仿真工具获得了仿真结果。18μm互补金属氧化物半导体（CMOS）技术参数。还设计了模拟滤波器，以验证建议的接地和浮动忆阻器仿真器的性能。