The self‐quenching and self‐recovery process of the InAlAs/InGaAs single‐photon avalanche detector (SPAD) is demonstrated, during which the percentage of overbias voltage increases from 1% to 10%. The results show that the overbias voltage has a significant impact on the performance of SPAD. It is found that when the percentage of overbias voltage increases from 2% to 10%, both the trigger time and the quench time decrease, whereas the recovery time decreases first and reaches a minimum when the percentage of overbias voltage is 5%, and then increases. It is also clarified the specific mechanism that the device loses its self‐feedback capability when the percentage of overbias voltage is less than 1%.

中文翻译：

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自反馈InAlAs / InGaAs单光子雪崩探测器的理论研究

演示了InAlAs / InGaAs单光子雪崩探测器（SPAD）的自猝灭和自恢复过程，在此过程中，过偏置电压的百分比从1％增加到10％。结果表明，过偏置电压对SPAD的性能有重大影响。发现当过偏置电压的百分比从2％增加到10％时，触发时间和猝灭时间都减少，而恢复时间则先减少，然后在过偏置电压的百分比为5％时达到最小值，然后恢复到最小值。增加。还阐明了特定机制，即当过偏置电压的百分比小于1％时，器件将失去其自反馈功能。