A structurally engineered memristor architecture based on metal‐oxide materials has lasting significance for the nonvolatile and high storing velocity of next‐generation nonvolatile memories. A memristor device based on multi‐stacked indium zinc oxide (IZO) structure is fabricated using a solution process. An Al/three‐multi‐stacked IZO/TiO₂/Al memristor device is fabricated with an In/Zn solution molar ratio of 7:3 with a repetitious spin‐coating and annealing process. The amorphous TiO₂ layer is prepared by atomic layer deposition with a low deposition temperature of 200 °C. The layers of IZO thin films in the memristor are raised from a single layer to three layers for intentional control of the concentration of oxygen vacancies, which play an important role in improving the electrical performance of memristor devices. The memristor exhibits uniform and reproducible resistance switching behavior with low‐resistance state (LRS) and high‐resistance state (HRS) voltage sweeps and shows excellent retention performance. The resistive switching phenomenon for an Al/multi‐stacked IZO/TiO₂/Al memristor device is explained from an analysis of the current–voltage characteristics and the impact of various IZO layers. This study also suggests that some other appropriate metal oxide thin films with good resistive‐switching performance can be used to prepare structurally enhanced memristor devices.

中文翻译：

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多层氧化铟锌薄膜增强了结构工程忆阻器器件的电性能

基于金属氧化物材料的结构工程忆阻器架构对下一代非易失性存储器的非易失性和高存储速度具有持久的意义。使用溶液工艺制造了基于多层氧化铟锌（IZO）结构的忆阻器器件。通过重复的旋涂和退火工艺，以7：3的In / Zn溶液摩尔比制造了Al /三层IZO / TiO ₂ / Al忆阻器器件。无定形TiO ₂该层是通过以200°C的低沉积温度进行原子层沉积而制备的。忆阻器中的IZO薄膜层从单层增加到三层，以有意控制氧空位的浓度，这在改善忆阻器器件的电性能中起着重要作用。忆阻器具有低电阻状态（LRS）和高电阻状态（HRS）电压扫描的均匀且可再现的电阻切换行为，并具有出色的保持性能。Al /多层IZO / TiO ₂的电阻切换现象通过对电流-电压特性和各种IZO层的影响进行分析来解释/ Al忆阻器器件。这项研究还表明，可以使用其他一些具有良好电阻切换性能的适当金属氧化物薄膜来制备结构增强的忆阻器器件。