Abstract

Some results of the numerical calculation of the electron ground state energy and electron density in tunnel-coupled InAs/GaAs quantum dots composing a simple cubic superlattice are presented. The calculation is performed within the modified effective mass method taking into account the microscopic (atomic) structure of individual quantum dots without taking spin-orbit coupling and strain effects into account. The dependence of the electron binding energy on radius R of quantum dots is studied. The electron binding energy is demonstrated to be proportional to R³ in the region of R < 27 Å.

中文翻译：

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隧道耦合的球形InAs / GaAs量子点中电子的能谱和波函数

摘要

给出了组成简单立方超晶格的隧道耦合InAs / GaAs量子点中电子基态能量和电子密度数值计算的一些结果。计算是在改进的有效质量方法内进行的，其中考虑了单个量子点的微观（原子）结构，而没有考虑自旋轨道耦合和应变效应。研究了电子结合能对量子点半径R的依赖性。已证明在R <27Å的范围内，电子结合能与R ³成正比。