Abstract

GaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are designed. The saturation power of the package die at a frequency of 1 GHz was 4 and 6.3 W at supply voltages of 30 and 60 V, respectively. The maximum drain efficiency is 57%.

中文翻译：

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硅衬底上的GaN微波晶体管的功率特性

摘要

硅衬底上的GaN异质结构已通过有机金属化学气相沉积法生长。设计了栅极周长为1.32 mm的晶体管。在电源电压为30 V和60 V时，封装裸片在1 GHz频率下的饱和功率分别为4 W和6.3W。最大漏极效率为57％。