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Effect of Modification of the Contribution of the Thermal Emission of Localized Charges to the Relaxation of the Photoresponse of a TlGaSe 2 Single Crystal
Physics of the Solid State ( IF 0.6 ) Pub Date : 2020-04-28 , DOI: 10.1134/s1063783420040186
A. P. Odrinskii

Abstract

Specific features of thermal emission from charge localization centers to an electrically inhomogeneous TlGaSe2 crystal have been studied. Inhomogeneities were formed during preliminary polarization of the sample at a low temperature of the ferroelectric state of the crystal. The results obtained are in good agreement with the specific features of recording of the thermal emission of localized charges on TlInS2 in the temperature range of the ferroelectric crystal state.


中文翻译:

修改局部电荷的热发射贡献对TlGaSe 2单晶光响应弛豫的影响

摘要

已经研究了从电荷定位中心到电不均匀的TlGaSe 2晶体的散热特征。在晶体的铁电态的低温下样品的初步极化期间形成不均匀性。获得的结果与在铁电晶体状态的温度范围内在TlInS 2上记录局部电荷的热发射的特定特征高度吻合。
更新日期:2020-04-28
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