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Effect of Modification of the Contribution of the Thermal Emission of Localized Charges to the Relaxation of the Photoresponse of a TlGaSe 2 Single Crystal
Physics of the Solid State ( IF 0.6 ) Pub Date : 2020-04-28 , DOI: 10.1134/s1063783420040186 A. P. Odrinskii
中文翻译:
修改局部电荷的热发射贡献对TlGaSe 2单晶光响应弛豫的影响
更新日期:2020-04-28
Physics of the Solid State ( IF 0.6 ) Pub Date : 2020-04-28 , DOI: 10.1134/s1063783420040186 A. P. Odrinskii
Abstract
Specific features of thermal emission from charge localization centers to an electrically inhomogeneous TlGaSe2 crystal have been studied. Inhomogeneities were formed during preliminary polarization of the sample at a low temperature of the ferroelectric state of the crystal. The results obtained are in good agreement with the specific features of recording of the thermal emission of localized charges on TlInS2 in the temperature range of the ferroelectric crystal state.中文翻译:
修改局部电荷的热发射贡献对TlGaSe 2单晶光响应弛豫的影响