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Post-deposition-annealed lanthanum-doped cerium oxide thin films: structural and electrical properties
Rare Metals ( IF 8.8 ) Pub Date : 2020-04-04 , DOI: 10.1007/s12598-020-01380-x
Viral Nivritti Barhate , Khushabu Santosh Agrawal , Vilas Sidhhanath Patil , Ashok Mahadu Mahajan

The metal-organic-decomposed lanthanum cerium oxide (LaCeO 2 ) solution was spin-coated on p-type Si substrate to form thin films. The method of microwave-assisted annealing was adopted to modify the surface properties of the deposited thin films. The post-deposition annealing (PDA) at different microwave powers and thermal annealing temperature of 400 °C was performed on LaCeO 2 thin films spin-coated on Si. Influence of this PDA on structural and electrical properties of deposited LaCeO 2 thin films was studied and compared. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) results reveal the great improvement in the structural properties in terms of removal of residual impurities from LaCeO 2 films, reduced roughness and improvement in crystalline properties as compared to those of hot-plate-annealed samples. The electrical properties of Al/LaCeO 2 /Si stack were also studied. The different electrical parameters such as k value, interface trap density ( D it ) and effective oxide charges ( Q eff ) were extracted and found to be improved with the increase in microwave annealing power.

中文翻译:

沉积后退火镧掺杂氧化铈薄膜:结构和电学特性

将金属有机物分解的氧化镧铈 (LaCeO 2 ) 溶液旋涂在 p 型硅衬底上以形成薄膜。采用微波辅助退火的方法来改变沉积薄膜的表面性质。在不同的微波功率和 400 °C 的热退火温度下对旋涂在 Si 上的 LaCeO 2 薄膜进行沉积后退火 (PDA)。该PDA对沉积的LaCeO 2 薄膜的结构和电学性能的影响进行了研究和比较。X 射线衍射 (XRD) 和傅里叶变换红外光谱 (FTIR) 结果表明,与热镀膜相比,LaCeO 2 薄膜在去除残留杂质、降低粗糙度和改善结晶性能方面的结构性能有了很大改善。板退火样品。还研究了Al/LaCeO 2 /Si叠层的电性能。提取了不同的电参数,如 k 值、界面陷阱密度 (D it ) 和有效氧化物电荷 (Q eff ),并发现随着微波退火功率的增加而改善。
更新日期:2020-04-04
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