For continued scaling with silicon, the stacked nanosheet field-effect transistor (SNSH-FET) is considered to be a major candidate for sub-7-nm technology. The radiofrequency (RF)/analog performance of a three-channel SNSH-FET is studied herein and benchmarked against a fin-shaped field-effect transistor (FinFET) at 7-nm technology and having the same footprint on the wafer. In the existing SNSH-FET on a bulk substrate, the source/drain junction formed on the bulk substrate contributes extra capacitance. An SNSH-FET structure with a source/drain-on-insulator (SDOI) configuration is presented herein, incorporating an extra channel (channel 4) on the bulk. Channel 4 has a supersteep retrograde (SSR) doping profile, which is achieved by placing a 10-nm-thick lightly doped silicon layer (SSR buffer layer) on the ground plane or a punchthrough-stopper (PTS) doped Si substrate. The parasitic source/drain junction capacitance and leakage under channel 4 are alleviated by growing a 10-nm-thick insulator layer before the in situ doped source/drain epiregion (a configuration referred to as SDOI). The presented structure has the same capacitance as the existing three-channel SNSH-FET on a PTS-Si substrate but with a 6% enhanced drive current, thereby achieving an improvement in terms of the delay and RF/analog performance.

中文翻译：

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一种源极/绝缘体上的漏极结构，用于提高堆叠的纳米片场效应晶体管的性能

为了继续进行硅缩放，堆叠纳米片场效应晶体管（SNSH-FET）被认为是7纳米以下技术的主要候选者。本文研究了三通道SNSH-FET的射频（RF）/模拟性能，并以7纳米技术的鳍形场效应晶体管（FinFET）为基准，并在晶圆上具有相同的占位面积。在块状衬底上的现有SNSH-FET中，在块状衬底上形成的源极/漏极结贡献了额外的电容。本文介绍了具有绝缘体上源极/漏极（SDOI）配置的SNSH-FET结构，该结构在主体上合并了一个额外的通道（通道4）。通道4具有超陡逆行（SSR）掺杂曲线，这是通过在接地面上放置10纳米厚的轻掺杂硅层（SSR缓冲层）或掺杂有穿通阻挡层（PTS）的Si基板来实现的。通过在原位掺杂的源极/漏极外延区（一种称为SDOI的结构）之前生长10nm厚的绝缘层，可以缓解沟道4下的寄生源极/漏极结电容和泄漏。提出的结构具有与PTS-Si衬底上现有的三通道SNSH-FET相同的电容，但驱动电流提高了6％，从而在延迟和RF /模拟性能方面实现了改善。