The influence of incorporating HfO₂ as a dielectric at the drain side and a silicon stack at the source side on the electrical performance of a double-gate tunnel field-effect transistor (TFET) is investigated by comparing a conventional TFET structure with four other structures in which the gate dielectric material is either homogeneous or heterogeneous while the insulator on the drain side is either SiO₂ or HfO₂. Moreover, a structure with a silicon source stack is proposed and the figures of merit of the resulting device are compared with other counterparts. The results of the simulations reveal that the presence of an HfO₂ insulator on the drain side reduces the ambipolar conduction while the heterogeneous gate dielectric enhances the drive current and transconductance. However, the use of HfO₂ slightly deteriorates the source–gate and drain–gate capacitances in comparison with the conventional TFET. Furthermore, the incorporation of a silicon source stack along with a heterogeneous gate dielectric and HfO₂ insulator on the drain side leads to a higher I_ON/I_OFF ratio, lower subthreshold slope (S), and lower ambipolar conduction in the studied TFET with channel length of 50 nm.

中文翻译：

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高k绝缘体和源极堆叠对双栅隧道FET性能影响的仿真研究

通过将传统的TFET结构与其他四个结构进行比较，研究了在漏极侧掺入HfO ₂作为电介质，在源极侧掺入硅叠层对双栅隧道场效应晶体管（TFET）的电性能的影响。其中栅极电介质材料是均质的或非均质的，而漏极侧的绝缘体是SiO ₂或HfO ₂。此外，提出了一种具有硅源堆叠的结构，并将所得器件的品质因数与其他同类器件进行了比较。模拟结果表明存在HfO ₂漏极侧的绝缘体减少了双极性传导，而异质栅极电介质则增强了驱动电流和跨导。但是，与传统的TFET相比，HfO ₂的使用会稍微降低源极-栅极和漏极-栅极的电容。此外，在研究的TFET中，将硅源堆栈与异质栅极电介质和HfO ₂绝缘体结合到漏极侧会导致较高的I _ON / I _OFF比，较低的亚阈值斜率（S）和较低的双极性传导。通道长度为50 nm。