A numerical framework for DC and RF small-signal simulations of nanowire transistors is presented, which is based on the self-consistent solution of the Poisson, Schrödinger, and Boltzmann transport equations and is stable for the entire range from weak to strong particle scattering. The proposed approach does not suffer from the deficiencies due to the transformation of the Boltzmann transport equation into the energy space and can handle the quasi-ballistic case. This is a key requirement for the investigation of plasma resonances and other high-mobility phenomena. The in-house solver is validated with results of a previously developed simulator based on the H-transformation for a conventional \(\hbox{N}^+\hbox{NN}^+\) silicon transistor with strong scattering. Then, its results are compared with those of moments-based models and it is shown that these do not provide a satisfactory description of the electron dynamics in the quasi-ballistic transport regime. Furthermore, the internal boundary conditions of the transport models at the contacts are found to have a significant impact on plasma resonances and the physics-based thermal-bath boundary condition strongly suppresses them.

中文翻译：

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无结纳米线晶体管中准弹道传输和等离子体振荡的数值方法

提出了用于纳米线晶体管的DC和RF小信号模拟的数值框架，该框架基于Poisson，Schrödinger和Boltzmann传输方程的自洽解，并且在从弱粒子散射到强粒子散射的整个范围内都是稳定的。由于将玻尔兹曼输运方程转换为能量空间，因此所提出的方法不会遭受缺陷，并且可以处理准弹道情况。这是研究等离子体共振和其他高迁移率现象的关键要求。内部求解器已通过基于传统\（\ hbox {N} ^ + \ hbox {NN} ^ + \）的H变换的先前开发的模拟器的结果进行了验证。具有强散射的硅晶体管。然后，将其结果与基于矩量模型的结果进行比较，结果表明，这些模型不能对准弹道输运态中的电子动力学提供令人满意的描述。此外，发现在接触处的传输模型的内部边界条件对等离子体共振有重大影响，基于物理的热浴边界条件强烈地抑制了它们。