The memristor was introduced as a nonlinear circuit element in 1971, and systems showing memristor-like properties such as zero-crossing hysteresis loops were described in 1976. In 2008, a thin-film system that behaved like a memristor over some part of its operating region was discovered. Memristors and memristive systems have thus become a hot research area in recent years, making it important to discover and study such systems that show memristive behavior. Memristors and memristive systems exhibit three distinguishing characteristics that are known as their three fingerprints. Discharge lamps were also shown to exhibit memristive behavior recently. The diac, an electronics component commonly used in alternating-current (AC) applications, exhibits a breakdown mechanism similar to that observed in discharge lamps. According to textbooks, a diac should also obey the characteristics of a memristive system. In this work, a phenomenological model for a diac is first presented, and it is shown that this model satisfies the description of a memristive system; circuit simulations are also used to verify the memristive system behavior of a diac. However, experiments performed on a DB32 diac reveal that it only behaves like a memristive system in a narrow frequency range around 1 kHz. The effect of the junction capacitances of the diac are found to be important in this regard, resulting in the deviation of the diac from the expected memristive system behavior, as supported by the model and circuit simulations. We also believe that the reverse recovery current at frequencies above 1 kHz inhibits the zero-crossing behavior of the diac, even though its hysteresis curve is very similar to that of a memristive system.

中文翻译：

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双向晶闸管的忆阻系统行为

忆阻器是在1971年作为非线性电路元件引入的，1976年描述了具有类似忆阻器特性的系统，例如过零磁滞回线。2008年，一个薄膜系统在其部分工作过程中表现得像忆阻器区域被发现。因此，忆阻器和忆阻系统已成为近年来的热门研究领域，因此重要的是发现和研究具有忆阻行为的此类系统。忆阻器和忆阻系统具有三个区别特征，称为三个指纹。最近还显示出放电灯表现出忆阻行为。双向可控硅是交流电（AC）应用中常用的电子元件，其击穿机理与放电灯相似。根据教科书，双向可控硅也应服从忆阻系统的特征。在这项工作中，首先提出了双向可控硅的现象学模型，并且表明该模型满足忆阻系统的描述；电路仿真还用于验证双向晶闸管的忆阻系统行为。但是，对DB32双向可控硅进行的实验表明，它仅在1 kHz左右的窄频率范围内表现得像忆阻系统。在这方面，发现双向晶闸管的结电容的影响很重要，导致双向晶闸管与预期的忆阻系统行为发生偏差，这在模型和电路仿真的支持下得以实现。我们还认为，高于1 kHz的频率的反向恢复电流会抑制双向晶闸管的过零行为，