Optical Properties of Atomic Defects in Hexagonal Boron Nitride Flakes under High PressureSupported by the Postdoctoral Science Foundation of China under Grant No. Y8T0111001.,Chinese Physics Letters

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Optical Properties of Atomic Defects in Hexagonal Boron Nitride Flakes under High PressureSupported by the Postdoctoral Science Foundation of China under Grant No. Y8T0111001.
Chinese Physics Letters ( IF 3.5 ) Pub Date : 2020-04-21 , DOI: 10.1088/0256-307x/37/4/044204
Xiao-Yu Zhao _{1,

2} , Jun-Hui Huang _{1,

2} , Zhi-Yao Zhuo _{1,

2} , Yong-Zhou Xue ₁ , Kun Ding ₁ , Xiu-Ming Dou _{1,

2} , Jian Liu _{1,

2} , Bao-Quan Sun _{1,

2}

Affiliation

We investigate the pressure spectral characteristics and the effective tuning of defect emissions in hexagonal boron nitride (hBN) at low temperatures using a diamond anvil cell (DAC). It is found that the redshift rate of emission energy is up to 10 meV/GPa, demonstrating a controllable tuning of single photon emitters through pressure. Based on the distribution character of pressure coefficients as a function of wavelength, different kinds of atomic defect states should be responsible for the observed defect emissions.

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