A set of planar Hall resistance (PHR) sensors was fabricated on rigid and flexible substrates. High signal-to-noise ratio, low offset voltage, nearly zero hysteresis of signal, and excellent linearity were demonstrated for sensors, based on Ta (5 nm)/NiFe (10 nm)/IrMn (10 nm)/Ta (5 nm) thin films, grown on polydimethylsiloxane (PDMS) and parylene C polymeric substrates. The effect of bending on the performance of the PHR sensors was studied. The effect of bending deformation on the performance characteristics of the fabricated PHR sensors is reversible until the bending angle reaches a critical one. The critical bending angle is shown to depend on the substrate composition. An irreversible deformation of a sensor's film, accompanied by the formation of wrinkles and cracks, occurs when the bending angle exceeds the critical one. This deformation originates from the difference between the values of Young's modulus of the substrate and the film. The bending stability of a PHR sensor, grown on PDMS substrate, was improved by deposition of 1 µm of parylene C as a buffer and as a capping layer. The performance characteristics of the designed bendable PHR sensors are compatible with requirements for applications in wearable electronics and medical diagnostic devices.

中文翻译：

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高度可弯曲的平面霍尔电阻传感器

在刚性和柔性基板上制造了一组平面霍尔电阻 (PHR) 传感器。基于 Ta (5 nm)/NiFe (10 nm)/IrMn (10 nm)/Ta (5 nm) 的传感器展示了高信噪比、低偏移电压、几乎为零的信号滞后和出色的线性度) 薄膜，生长在聚二甲基硅氧烷 (PDMS) 和聚对二甲苯 C 聚合物基材上。研究了弯曲对 PHR 传感器性能的影响。弯曲变形对制造的 PHR 传感器性能特征的影响是可逆的，直到弯曲角度达到临界值。显示的临界弯曲角取决于基板成分。当弯曲角度超过临界角时，传感器薄膜会发生不可逆变形，并伴随着皱纹和裂纹的形成。这种变形源于基材和薄膜的杨氏模量值之间的差异。在 PDMS 基板上生长的 PHR 传感器的弯曲稳定性通过沉积 1 µm 的聚对二甲苯 C 作为缓冲剂和覆盖层得到改善。设计的可弯曲 PHR 传感器的性能特性符合可穿戴电子设备和医疗诊断设备应用的要求。