The effect of different point defects in CdZnTe (CZT) crystals on carrier transport performance were discussed. The energy level and concentration of the traps were determined by the photo-induced current transient spectroscopy (PICTS). By adding the infrared light illumination into the PICTS experiment, the effect of sub-bandgap light on defects was observed. Meanwhile, several DC photoconductive experiments were done under different wavelength lights were used to explore the effect of the different defects on carrier transport properties of CZT crystals. Furthermore, the energy spectrum test was used to investigate the effect of sub-bandgap light on the energy resolution of CZT detectors. The data results showed that sub-bandgap light could effectively change the ionization state of defects. The doubly ionized Te antisite (Te_Cd²⁺) had the greatest effect on mobility-lifetime product(μτ) of electrons owing to its stronger ability of capturing electrons and energy level located around the midgap. While the secondary ionized Cd vacancy (V_Cd²⁻), as considered as a hole trap, had the greatest effect on μτ-product of holes. Consequently, choosing suitable infrared light can improve the detection performance of CZT crystal effectively.

讨论了CdZnTe（CZT）晶体中不同点缺陷对载流子传输性能的影响。陷阱的能级和浓度由光感应电流瞬变光谱法（PICTS）确定。通过在PICTS实验中添加红外光照明，观察了亚带隙光对缺陷的影响。同时，在不同波长的光下进行了几次直流光电导实验，以探讨不同缺陷对CZT晶体载流子传输性能的影响。此外，使用能谱测试来研究子带隙光对CZT检测器能量分辨率的影响。数据结果表明，亚带隙光可以有效地改变缺陷的电离状态。双重电离的Te反位点（Te_Cd ²⁺）对电子的迁移率-寿命乘积（μτ）具有最大的影响，这是因为_Cd ²⁺的捕获电子的能力和位于中间能隙附近的能级更高。尽管二次电离的Cd空位（V _Cd ^2-）被视为空穴陷阱，但对空穴的μτ乘积影响最大。因此，选择合适的红外光可以有效地改善CZT晶体的检测性能。