We studied the electronic structures of (001), (110), and (111) LaNiO₃ (LNO) films using XPS. Core-level photoemission spectra analysis reveals that the energy separation ΔE from the satellite to main peaks of Ni 2p_1/2 clearly varies in accordance with LNO film orientation. The ΔE in (111) LNO films is 9.71 ± 0.1 eV, larger than the values of 9.39 ± 0.1 and 9.21 ± 0.1 eV in corresponding (001) and (110) films, respectively. This indicates that the Ni 3d–O 2p hopping interaction strength t_pd is larger in the (111) LNO films compared with the other two films. The large aforementioned t_pd in (111) LNO films also changes the electron states near the Fermi level, which suggests improved electrical conductive properties in (111) LNO films compared with corresponding (110) and (001) films.

我们使用XPS研究了（001），（110）和（111）LaNiO ₃（LNO）薄膜的电子结构。核心能级光发射光谱分析表明，从卫星到Ni 2 p _1/2的主峰的能量间隔ΔE明显随LNO膜取向而变化。该Δ È在（111）LNO膜是9.71±0.1电子伏特，比9.39±0.1和9.21±0.1电子伏特的值在相应的（001）放大和（110）膜，分别。这表明（111）LNO薄膜中的Ni 3 d -O 2 p跳跃相互作用强度t _pd比其他两个薄膜要大。前面提到的大t _pd （111）LNO膜中的ZnO也改变了费米能级附近的电子状态，这表明与相应的（110）和（001）膜相比，（111）LNO膜的导电性能得到了改善。