We studied the thermal transport across a GaAs/AlGaAs interface using time-resolved Reflection High Energy Electron Diffraction. The lattice temperature change of the GaAs nanofilm was directly monitored and numerically simulated using diffusive heat equations based on Fourier's Law. The extracted thermal boundary resistances (TBRs) were found to decrease with increasing lattice temperature imbalance across the interface. The TBRs were found to agree well with the Diffuse Mismatch Model in the diffusive transport region, but showed evidence of further decrease at temperatures higher than Debye temperature, opening up questions about the mechanisms governing heat transfer at interfaces between very similar semiconductor nanoscale materials under highly non-equilibrium conditions.

中文翻译：

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跨GaAs / AlGaAs异质结构界面的纳米级热传输

我们使用时间分辨反射高能电子衍射研究了跨GaAs / AlGaAs界面的热传输。通过基于傅立叶定律的扩散热方程，可以直接监测GaAs纳米膜的晶格温度变化并进行数值模拟。发现提取的热边界电阻（TBR）随着界面温度的升高而降低。发现TBR在扩散传输区域中与扩散不匹配模型非常吻合，但显示出在高于德拜温度的温度下进一步降低的证据，这引发了关于在高度相似的半导体纳米级材料之间的界面上控制传热机理的问题。非平衡条件。