The harmonic power amplifiers (PAs) have potential to be used in the millimeter‐wave band, but the sophisticate parasitic network effects on the projection of reflection coefficient coverage from transistor package (TP) plane to current generator (CG) plane is an important challenge. In this work, every typical parasitic element with unique effect is derived theoretically. Thus, in the millimeter‐wave band, the reduced and rotated projection of parasitic network between the two planes becomes clear. The fundamental frequency (20 GHz), second harmonics (40 GHz), and third harmonics (60 GHz) load‐pull simulations using the commercial standard nonlinear transistor modeling are simulated. The simulation and derivation are consistent and show that output power and efficiency become less sensitive to harmonic tuning due to the lossy parasitic network. This work will be helpful for harmonic tuned transistor and PA design in the millimeter‐wave band, in the future.

中文翻译：

---

基于全面的大信号模型探索毫米波段以下晶体管的电流产生平面的阻抗覆盖极限

谐波功率放大器（PA）具有在毫米波波段中使用的潜力，但是复杂的寄生网络对从晶体管封装（TP）平面到电流发生器（CG）平面的反射系数覆盖范围投影的影响是一个重要的挑战。在这项工作中，从理论上推导了每个具有独特作用的典型寄生元件。因此，在毫米波段，两个平面之间的寄生网络的减小和旋转的投影变得很明显。使用商业标准的非线性晶体管建模对基频（20 GHz），二次谐波（40 GHz）和三次谐波（60 GHz）负载-牵引进行了仿真。仿真和推导是一致的，并且表明由于有损寄生网络，输出功率和效率对谐波调谐的敏感性降低。