This paper presents an electrostatic potential–based analytical model of drain current for ferroelectric dual material gate all around tunnel field effect transistors (FE‐DMGAA‐TFETs). Analytical model is formulated to examine the device characteristics by combining the evanescent mode analysis (EMA) and Landau‐Khalatnikov equation. Ferroelectric material exhibits negative capacitance, which enhances the drain current by providing an amplification to the surface potential. The impact of varying the ferroelectric layer thickness on the device characteristics is studied. The accuracy of the model is evaluated by comparing it with the results obtained from numerical calculations and found to be in good accord. The ON current of the ferroelectric‐based TFETs is approximately 100 times the conventional DMGAA‐TFETs.

中文翻译：

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基于铁电双材料栅极（FE‐DMGAA）TFET的基于表面电势的分析

本文提出了一种基于静电势的铁电双材料栅极漏极电流的分析模型，该模型围绕着隧道场效应晶体管（FE‐DMGAA‐TFET）。通过结合the逝模式分析（EMA）和Landau-Khalatnikov方程，制定了分析模型以检查器件特性。铁电材料具有负电容，可通过放大表面电势来增强漏极电流。研究了改变铁电层厚度对器件特性的影响。通过将其与从数值计算获得的结果进行比较来评估模型的准确性，发现模型的准确性良好。基于铁电的TFET的导通电流约为传统DMGAA-TFET的100倍。