This study presents a physical‐based broadband radio frequency (RF) small‐signal equivalent circuit model (ECM) for triple‐gate (TG) bulk fin field‐effect transistors (FinFETs) and its extraction methodology. To increase model accuracy and extend the effective frequency band, substrate effect, test ground‐signal‐ground (G‐S‐G) pads, and metal interconnection parasitics are considered together in the transistor model. All the elements in the model are extracted from a combination of analysis and physical equations using multibias scattering parameters. On the basis of the proposed model, the simulation results correspond to the measured results in the frequency range from 200 MHz to 220 GHz without any complex fitting or optimization steps.

中文翻译：

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RF CMOS技术中用于块FinFET的0.2‐220 GHz宽带小信号模型提取方法

这项研究提出了一种用于三栅极（TG）体鳍场效应晶体管（FinFET）的基于物理的宽带射频（RF）小信号等效电路模型（ECM）及其提取方法。为了提高模型精度并扩展有效频带，在晶体管模型中将基板效应，测试地-信号-接地（G-S-G）焊盘和金属互连寄生效应一并考虑在内。使用多偏向散射参数从分析和物理方程的组合中提取模型中的所有元素。在建议的模型的基础上，仿真结果与200 MHz至220 GHz频率范围内的测量结果相对应，而无需任何复杂的拟合或优化步骤。