Stacked structure is a good solution to overcome the low output voltage swing provided by a single device. When several devices are stacked, the bandwidth and output power are multiple times higher. This article analyzes the small‐signal voltage gain of the stacked structure, deriving the gain expression of the high‐frequency model and simplified model. Based on the specific device parameter, the different small‐signal voltage gains between the two models are compared and the designed stacked structure is proved to obtain a flat gain at low frequencies below about 3 GHz. To our best knowledge, this is the first article to analyze the gain flatness of stacked structure with two equivalent circuit models. To verify the stacked theory, a pseudomorphic high‐electron‐mobility transistor（PHEMT） power amplifier (PA) is implemented using 0.25 μm Gallium arsenide (GaAs) technology. The PA achieves an ultra‐high bandwidth of 30 MHz to 3 GHz and a linear gain of 21 dB ± 1.5 dB. At a 16‐V drain bias voltage, a saturated output power of higher than 2 W and a peak power‐added efficiency (PAE) of 44.1% are attained.

中文翻译：

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使用等效电路模型分析和设计分数带宽为196％的堆叠式功率放大器

堆叠结构是克服单个器件提供的低输出电压摆幅的好方法。当几个设备堆叠在一起时，带宽和输出功率要高出好几倍。本文分析了堆叠结构的小信号电压增益，推导了高频模型和简化模型的增益表达式。根据特定的器件参数，比较了两个模型之间不同的小信号电压增益，并证明了所设计的堆叠结构在低于3 GHz的低频下可获得平坦的增益。据我们所知，这是第一篇使用两个等效电路模型分析堆叠结构的增益平坦度的文章。为了验证堆叠理论，使用0来实现拟态高电子迁移率晶体管（PHEMT）功率放大器（PA）。25μm砷化镓（GaAs）技术。该PA可实现30 MHz至3 GHz的超高带宽，以及21 dB±1.5 dB的线性增益。在16V的漏极偏置电压下，可获得高于2 W的饱和输出功率和44.1％的峰值功率附加效率（PAE）。