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Semiconductor Plasma Antennas Formed by Laser Radiation
Technical Physics Letters ( IF 0.6 ) Pub Date : 2020-01-09 , DOI: 10.1134/s1063785019120174
N. N. Bogachev , N. G. Gusein-zade , I. V. Zhluktova , S. Yu. Kazantsev , V. A. Kamynin , S. V. Podlesnykh , V. E. Rogalin , A. I. Trikshev , S. A. Filatova , V. B. Tsvetkov , D. V. Shokhrin

Abstract

Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.


中文翻译:

激光辐射形成的半导体等离子天线

摘要

实验研究了基于Ge和Si单晶的半导体等离子天线与激光二极管辐射产生的表面非平衡电子空穴等离子体的高频信号传输效率。确定辐射的6至7.5 GHz微波信号的幅度与激光功率的关系以及半导体发射偶极天线上激光辐射区域的大小。结果表明,通过以Ge晶体形成的等离子体天线,有用信号的传输效率可以提高十倍以上。
更新日期:2020-01-09
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