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Semiconductor Plasma Antennas Formed by Laser Radiation
Technical Physics Letters ( IF 0.6 ) Pub Date : 2020-01-09 , DOI: 10.1134/s1063785019120174 N. N. Bogachev , N. G. Gusein-zade , I. V. Zhluktova , S. Yu. Kazantsev , V. A. Kamynin , S. V. Podlesnykh , V. E. Rogalin , A. I. Trikshev , S. A. Filatova , V. B. Tsvetkov , D. V. Shokhrin
中文翻译:
激光辐射形成的半导体等离子天线
更新日期:2020-01-09
Technical Physics Letters ( IF 0.6 ) Pub Date : 2020-01-09 , DOI: 10.1134/s1063785019120174 N. N. Bogachev , N. G. Gusein-zade , I. V. Zhluktova , S. Yu. Kazantsev , V. A. Kamynin , S. V. Podlesnykh , V. E. Rogalin , A. I. Trikshev , S. A. Filatova , V. B. Tsvetkov , D. V. Shokhrin
Abstract
Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.中文翻译:
激光辐射形成的半导体等离子天线