Abstract

Spectral characteristics of the Ga(In)As subcell of triple-junction GaInP/Ga(In)As/Ge solar cells have been experimentally and theoretically studied. It is established that the use of a wide-bandgap “window” layer with optimum thickness (100 nm for Ga_0.51In_0.49P, 110 nm for Al_0.4Ga_0.6As, and 115 nm for the Al_0.8Ga_0.2As) in Ga(In)As subcell allows the response photocurrent to be increased by about 0.5 mA/cm²; the change of material in the rear potential barrier of the GaInP subcell from Al_0.53In_0.47P to p⁺-Ga_0.51In_0.49P or AlGaAs allows the short-circuit current of Ga(In)As subcell to be additionally increased by about 0.8 mA/cm²; and the use of a wide-bandgap n⁺⁺-Ga_0.51In_0.49P layer instead of n⁺⁺-GaAs in the tunnel diode increases the photocurrent by about 1 mA/cm².

中文翻译：

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基于GaInP / Ga（In）As / Ge异质结构的多结太阳能电池中Ga（In）As子电池的光电流增加

摘要

已经通过实验和理论研究了三结GaInP / Ga（In）As / Ge太阳能电池Ga（In）As子电池的光谱特性。已确定在Ga中使用具有最佳厚度（Ga _0.51 In _0.49 P为100 nm，Al _0.4 Ga _0.6 As为110 nm，Al _0.8 Ga _0.2 As为115 nm）的宽带隙“窗口”层（In）As子电池可使响应光电流增加约0.5 mA / cm ²；GaInP子电池后势垒中的材料从Al _0.53 In _0.47 P变为p ⁺ -Ga _0.51 In _0.49P或AlGaAs使Ga（In）As子电池的短路电流额外增加约0.8mA / cm ²；并且在隧道二极管中使用宽带隙n ⁺⁺ -Ga _0.51 In _0.49 P层代替n ⁺⁺ -GaAs可以使光电流增加约1 mA / cm ²。