Abstract

The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator technology has been numerically simulated. It is established that the RTN amplitude in the subthreshold region of gate voltages for a FinFET with a trapezoidal cross section of channel is significantly lower than that for the transistor with rectangular cross section of a channel. In addition, under the same conditions, the RTN amplitude at the threshold gate voltage in a junctionless FinFET is significantly lower than that in planar fully depleted and in usual FinFET.

中文翻译：

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在无结式FinFET的亚阈值情况下，鳍形对随机电报噪声幅度的影响

摘要

数值模拟了使用绝缘体上硅技术制造的具有矩形和梯形沟道（鳍）横截面的无结场效应晶体管（FinFET）中随机电报噪声（RTN）幅度对栅极过驱动的依赖性。已经确定，具有梯形横截面的沟道的FinFET的栅极电压的亚阈值区域中的RTN幅度明显低于具有矩形横截面的晶体管的RTN的幅度。此外，在相同条件下，无结FinFET的阈值栅极电压下的RTN幅度明显低于平面完全耗尽型和常规FinFET的RTN幅度。