We report high-performance broad-area eight-layer InAs/GaAs quantum-dot lasers (QDLs) emitting at 1.3 μm in the pulse and continuous-wave (CW) operations. Operational characteristics of the fabricated QDLs, including the emission wavelength, output power, threshold-current density, differential quantum efficiency, and characteristic temperature, are investigated at different temperatures. For as-cleaved facets of 100 μm wide and 1 mm cavity-length device, an output power of 100 mW is achieved at 1 kHz with 5% duty cycle and 49 mW in the CW operation. The device exhibits a threshold-current density of 56 A/cm² at room temperature in both the operating modes and increases to 71 and 80 A/cm² the in the pulse and CW modes, respectively, at 343 K. Over a temperature range of 298K to 343 K, we calculate the threshold characteristic temperature of 166K and 119K and slope-efficiency characteristic temperature of 2061K and 408K in the pulse and CW modes, respectively. The laser exhibits differential quantum efficiency of 41% and 32% in the pulse and CW mode, respectively. We observed that the device exhibited negligible dependence over a temperature range of 298K to 343 K.

中文翻译：

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8层λ〜1.3μmInAs / GaAs量子点激光器的温度无关性能

我们报告的高性能大面积八层的InAs / GaAs量子点激光器（QDLS）发射在1.3 μ在脉冲和连续波（CW）操作米。研究了在不同温度下制造的QDL的工作特性，包括发射波长，输出功率，阈值电流密度，差分量子效率和特征温度。对于所解理100的刻面μ米宽和1mm腔长度装置，100毫瓦的输出功率在1 kHz，用5％的占空比和49毫瓦在CW操作得以实现。在两种工作模式下，该器件在室温下均显示出56 A / cm ²的阈值电流密度，并分别增加至71和80 A / cm ²在脉冲和CW模式下分别为343K。在298K至343 K的温度范围内，我们计算脉冲和CW模式下的阈值特征温度166K和119K以及斜率效率特征温度2061K和408K ， 分别。在脉冲和连续波模式下，该激光器的差分量子效率分别为41％和32％。我们观察到该器件在298K至343K的温度范围内表现出的依赖性可忽略不计。