Second harmonic generation (SHG) characteristics of single and multilayer field-effect passivation (FEP) structures were investigated for CMOS image sensor application. By compensating the internal multiple reflection effect, the SHG characteristics of single and multilayer FEP structures were compared under equivalent conditions. Analysis of the time-dependent SHG intensity confirmed that the multilayer FEP structure has a 2.7 times higher SHG intensity than the single-layer structure, and the FEP layer is negatively charged from the initial state. In particular, when atomic layer deposition conditions were varied to control the Al2O3 composition ratio, the SHG demonstrated greater detecting sensitivity than conventional material analysis methods such as RBS and XPS, even though it cannot distinguish the elements. Moreover, SIMS composition analysis verified that the initial state SHG intensity increase under high oxygen ambient Al2O3 growth condition can be attributed to the change of impurities rather than the effect of oxygen areal density increase.

中文翻译：

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使用二次谐波发生测量研究场效应钝化层特性

针对 CMOS 图像传感器应用研究了单层和多层场效应钝化 (FEP) 结构的二次谐波产生 (SHG) 特性。通过补偿内部多次反射效应，在等效条件下比较了单层和多层 FEP 结构的 SHG 特性。对时间相关的 SHG 强度的分析证实，多层 FEP 结构的 SHG 强度比单层结构高 2.7 倍，并且 FEP 层从初始状态开始带负电。特别是，当改变原子层沉积条件以控制 Al2O3 组成比时，即使无法区分元素，SHG 也表现出比 RBS 和 XPS 等传统材料分析方法更高的检测灵敏度。而且，