Heat effects on femtosecond laser annealing to crystallize doped amorphous Si films are studied. The structural, optical and electronic properties of phosphorus-doped amorphous Si films before and after femtosecond laser treatment are characterized. As the temperature increases from room temperature to 200 °C controlled by a hot-stage, the grain size and number of crystalline Si on the films are gradually enhanced, which is confirmed by comparing the surface morphologies and analyzing the Raman spectrum. It is demonstrated that heating the substrate can promote the phase transformation of amorphous Si and the activation of phosphorus dopants, yielding a significant improvement in the light-trapping capability and carrier conductivity of the laser-annealed films. By using the proposed heat-assisted femtosecond laser annealing technique, polycrystallized phosphorus-doped amorphous Si films are produced showing highly absorptive and conductive, which might be further applied in photovoltaic and microelectronic devices.

中文翻译：

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使用热辅助飞秒激光退火的磷掺杂 α-Si 薄膜结晶

研究了飞秒激光退火对掺杂非晶硅薄膜结晶的热效应。表征了飞秒激光处理前后掺磷非晶硅薄膜的结构、光学和电子特性。随着温度从室温升高到由热阶段控制的 200°C，薄膜上的晶粒尺寸和结晶硅的数量逐渐增加，这通过比较表面形貌和分析拉曼光谱得到证实。结果表明，加热衬底可以促进非晶硅的相变和磷掺杂剂的活化，从而显着提高激光退火薄膜的光捕获能力和载流子电导率。通过使用所提出的热辅助飞秒激光退火技术，