A low-power sectorial split-drain MAGFET (SSD-MAGFET) based magnetic field strength sensor consists of a simple counter-based time-to-digital converter was proposed, which converts the magnetic field strength into a digital value by observing the relative drain voltage difference in the SSD-MAGFET, thus eliminating the adverse effect of device and circuit noises without the need of sophisticated operational amplifier nor precise voltage reference. Complete digital readout of the magnetic field strength, field polarity and conversion time information facilitates the seamless integration of the proposed circuit to read-time application. The proposed circuit is fully compatible with standard CMOS process and the presented design example was implemented on 2.5 μm metal gate CMOS process which achieves conversion accuracy is of 1.226 mT/bit for the field range of a maximum dynamic range of ±313.96 mT, and the minimum conversion rate is 17.6 Hz where the whole chip consumes an average of 67.5 mW at supply voltage of 5 V, which is suitable for seamless integration with all sorts of MCU applications.

提出了一种基于低功耗扇形分漏极MAGFET（SSD-MAGFET）的磁场强度传感器，该传感器由一个简单的基于计数器的时间数字转换器组成，该转换器通过观察相对漏极将磁场强度转换为数字值SSD-MAGFET中的电压差，从而消除了器件和电路噪声的不利影响，而无需复杂的运算放大器或精确的电压基准。磁场强度，场极性和转换时间信息的完整数字读出有助于将拟议的电路无缝集成到读取时间应用中。所提出的电路与标准CMOS工艺完全兼容，并且所提出的设计实例在2.5μm的高度上实现。 在最大动态范围为±313.96 mT的磁场范围内，可实现转换精度的m金属栅CMOS工艺为1.226 mT / bit，最小转换速率为17.6 Hz，其中整个芯片在电源电压下平均消耗67.5 mW 5 V，适合与各种MCU应用无缝集成。