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Electrical modeling of tapered TSV including MOS-Field effect and substrate parasitics: Analysis and application
Microelectronics Journal ( IF 2.2 ) Pub Date : 2020-04-20 , DOI: 10.1016/j.mejo.2020.104797
Amira Nabil , Jose A. Bernardo , Yue Ma , Mohamed Abouelatta , Ahmed Shaker , Latifa Fakri Bouchet , Hani Ragai , Christian Gontrand

In this paper, a simple closed-form model identifying the electrical behavior of a taper through silicon via (TSV) is reported. The model is based on the Transmission Line Method (TLM) and 3D electromagnetic simulations. The usefulness of the modeling approach is validated through measurements on some test structures over a wide range of frequencies from DC to 10 ​GHz. The substrate coupling and MOS effects are included in the electrical description of the 3D system as they are no longer negligible at high-frequency range operation. The efficient 3D-TLE (Transmission Line Extractor) by INL (Institute of Nanotechnology of Lyon) tool is used to extract the impedance of contacts and TSVs. Moreover, as an application of this extractor, a 26GHz/2 ​GHz bandwidth TSV based RF filter is proposed and designed.



中文翻译:

锥形TSV的电气建模,包括MOS场效应和衬底寄生效应:分析和应用

在本文中,报告了一种简单的闭合形式模型,该模型识别通过硅通孔(TSV)的锥度的电性能。该模型基于传输线方法(TLM)和3D电磁仿真。通过在从DC到10 GHz的宽频率范围内对某些测试结构进行测量,验证了建模方法的有效性。基板耦合和MOS效应包含在3D系统的电气说明中,因为它们在高频范围操作下不再可以忽略不计。INL(里昂纳米技术研究所)工具提供的高效3D-TLE(传输线提取器)用于提取触点和TSV的阻抗。此外,作为该提取器的应用,提出并设计了基于26GHz / 2 GHz带宽TSV的RF滤波器。

更新日期:2020-04-20
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