Tunnel Field Effect Transistors (TFETs) are known to be compromised by higher order processes that downgrade their performance compared to ballistic projections. Using a quasi-analytical model that extends the chemistry based Simmons equation to include finite temperature effects, potential variations and scattering, we exhibit that non-idealities like trap-assisted tunneling and Auger generation can explain the observed performance discrepancy. In particular, Auger generation is the dominant leakage mechanism in TFETs at low trap densities. Our studies suggest that possible ways of reducing Auger generation rate are reducing source carrier concentration and increasing the valence band transport effective mass of the source material. In this paper, we specifically investigate the impact of variations of these factors on device performance of staggered bandgap planar III-V heterojunction Tunnel FETs.

隧道场效应晶体管（TFET）已知会受到高阶工艺的损害，与弹道投影相比，高阶工艺会降低其性能。使用将基于化学的西蒙斯方程式扩展到包括有限的温度效应，电势变化和散射的准分析模型，我们显示出非理想性（如陷阱辅助隧穿和俄歇生成）可以解释观察到的性能差异。特别是，在低陷阱密度的情况下，俄歇产生是TFET中主要的泄漏机制。我们的研究表明，降低俄歇生成速率的可能方法是降低源载流子浓度和增加源材料的价带传输有效质量。在本文中，