Investigation of the third-order intercept point, IP3 and nonlinear distortion level, NDL for pre-and post-multilayer processed GaAs pHEMTs has been accomplished by employing two-tone intermodulation distortion measurements. The third-order intercept point is a biasing, input power, frequency-dependent term, particularly related to the fundamental and third-order intermodulation distortion component and the study extended from low to high temperatures. The main findings are that the output referenced OIP3 decreased while the input referenced IIP₃ increased with frequency at peak transconductance condition and the study further extended to multi-bias operation condition. Within the measured temperature range, the IP₃ and NDL modified significantly following the behaviour of IMD3 distortion. This investigation of IP3 is utilized to measure how much distortion is created and referring this to the antenna input gives a straightforward strategy to decide whether or not the spec can be met. On the other hand, analysis of NDL is vital for choosing the most excellent biasing alternative with the entryway measurements of the device to create a compromise agreeing to the desired utilization.

通过采用双音互调失真测量，可以完成多层前和后处理GaAs pHEMT的三阶截点，IP3和非线性失真水平NDL的研究。三阶交调点是一个偏置，输入功率，频率相关的术语，尤其与基波和三阶互调失真分量有关，并且研究从低温扩展到高温。主要发现是，在峰值跨导条件下，输出参考OIP3随频率降低而输入参考IIP ₃随频率增加，并且该研究进一步扩展到多偏置工作条件。在测得的温度范围内，IP ₃NDL和NDL随IMD3失真的行为而显着改变。对IP3的研究被用于测量产生了多少失真，并将其称为天线输入，这提供了一种直接的策略来决定是否可以满足规范。另一方面，对NDL的分析对于选择器件的入口测量来选择最出色的偏置替代方案以创造一个折衷于所需利用率的方案至关重要。