In this work, we report a high-performance lateral GaN Schottky barrier diode (SBD) with a low turn-on voltage (V_ON) of 0.39 V and low reverse current. Meanwhile we have proposed a model to comprehend the leakage current mechanism in this GaN SBDs. The reverse current transport mechanism was analyzed by temperature-dependent current–voltage (T-I-V) measurements. The results indicate that reverse current is dominated by thermionic emission (TE), Frenkel–Poole (FP) emission and trap assisted tunneling (TAT) near zero bias, at low and high reverse bias, respectively. The thermionic field emission (TFE) is found to be the main mechanism near the breakdown voltage (BV). The comparison shows Al₂O₃ passivation layer can effectively reduce leakage current.

在这项工作中，我们报告了一种高性能的横向GaN肖特基势垒二极管（SBD），具有0.39 V的低开启电压（V _ON）和低的反向电流。同时，我们提出了一个模型来理解这种GaN SBD中的漏电流机制。通过与温度相关的电流-电压（T - I - V）测量来分析反向电流传输机制。结果表明，反向电流主要由热电子发射（TE），Frenkel-Poole（FP）发射和陷阱辅助隧穿（TAT）接近于零偏压（分别在低和高反向偏压下）决定。发现热电子场发射（TFE）是击穿电压（BV）附近的主要机理。比较显示Al ₂ O ₃ 钝化层可以有效减少漏电流。