A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while accounting for both carriers. The model has been calibrated with measurements by our group, as well as on noise versus gain data from the literature. We explore the avalanche photodiode design trade-offs related to the number of GaAs/AlGaAs conduction band steps for X-ray spectroscopy applications.

中文翻译：

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考虑到电子和空穴碰撞电离的GaAs / AlGaAs阶梯雪崩光电二极管的优化

最近开发的电子和空穴碰撞电离的非局部历史相关模型用于计算具有III-V化合物半导体异质结特征的雪崩光电二极管的增益和过量噪声因子，同时考虑了两个载流子。该模型已通过我们小组的测量结果进行了校准，并根据文献中的噪声与增益数据进行了校准。我们探索了与X射线光谱学应用的GaAs / AlGaAs导带阶跃数相关的雪崩光电二极管设计折衷。