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Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM
Solid-State Electronics ( IF 1.7 ) Pub Date : 2019-11-27 , DOI: 10.1016/j.sse.2019.107730
R.L. de Orio , A. Makarov , S. Selberherr , W. Goes , J. Ender , S. Fiorentini , V. Sverdlov

We investigate the robustness of a purely electrical field-free switching of a perpendicularly magnetized free layer based on SOT. The effective magnetic field which leads to deterministic switching of a rectangular as well as of a square free layer is created dynamically by a two-current pulse scheme. It is demonstrated that the switching is very robust, being insensitive to fluctuations of the write pulses’ durations and to relatively large variations of the heavy metal wires’ dimensions. Furthermore, it remains reliable for a wide range of synchronization failures between the pulses. The combination of a rectangular free layer shape with a partial overlap with the second current line accelerates the switching of the cell allowing a fast, 0.25 ns, switching.



中文翻译:

用于SOT-MRAM的垂直磁化自由层的强大无磁场切换

我们研究基于SOT的垂直磁化自由层的纯无电场切换的鲁棒性。通过双电流脉冲方案动态创建有效磁场,该磁场导致矩形以及正方形自由层的确定性切换。已经证明,该切换非常鲁棒,对写入脉冲的持续时间的波动以及重金属线的尺寸的相对较大的变化不敏感。此外,对于脉冲之间的广泛同步失败,它仍然是可靠的。矩形自由层形状与第二条电流线部分重叠的组合加快了单元的切换速度,从而实现了0.25 ns的快速切换。

更新日期:2019-11-27
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