This paper reports on resistive switching behavior observed in resistive random access memory (RRAM) devices fabricated with aluminum oxide (AlO_x) and graphene oxide (GO) dielectric films, which were solution-processed under low annealing temperatures of 250 °C and 50 °C for AlO_x and GO dielectric films, respectively. As representative of metal oxide and two-dimensional material, a detailed study and comprehensive comparison in view of resistive switching performance has been conducted for AlO_x and GO based RRAM, including operation voltage, resistance distribution, resistance ratio, conduction mechanism and retention/endurance property. A smaller operation voltage and better stability were demonstrated in AlO_x based RRAM devices while higher resistance magnitude of high resistance state (HRS) and resistance ratio were observed in GO based RRAM devices. The current study opens up promising applications of environmental-friendly solution-processed AlO_x and GO films with lower energy consumption for non-volatile memory (NVM).

本文报道了在氧化铝（AlO _x）和氧化石墨烯（GO）介电膜制成的电阻式随机存取存储器（RRAM）器件中观察到的电阻切换行为，这些器件在250°C和50°C的低退火温度下固溶处理C分别用于AlO _x和GO介电膜。作为金属氧化物和二维材料的代表，已针对基于AlO _x和GO的RRAM进行了电阻切换性能的详细研究和全面比较，包括工作电压，电阻分布，电阻比，导电机理和保持/耐久力属性。在AlO _x中证明了较小的工作电压和更好的稳定性在基于GO的RRAM器件中观察到较高的高电阻状态（HRS）和电阻比的电阻值。当前的研究为环保解决方案处理的AlO _x和GO薄膜开辟了有前途的应用，该薄膜具有较低的非易失性存储器（NVM）的能耗。