Preliminary results are reported on an in-situ heater for thermal assist recovery of MOS transistor and is demonstrated in 28 nm Fully Depleted Silicon-On-Insulator (FD-SOI) Ultra-Thin Body and Buried oxide (UTBB) high-k metal gate CMOS technology. This approach consists in functionalizing the source of a MOS device. We demonstrate that it is possible to heat the device with the current flowing between two split source contacts. Electrical and temperature measurements of the structures were made at wafer level. Moreover, 3D TCAD electro-thermal simulations assess the concept. The thermal resistor calibration on source and gate are performed on low and high V_T NMOS devices with thin and thick high-k metal gate oxide. We have successfully reproduced the I-V responses on several samples at wafer level by electrical sweep in the 100 ns range into the split source contacts. The local temperature change effect was measured from room temperature up to +300 K. Finally, this first study shows that the thermal recovery is efficient and opens the door on new innovative solutions and could be applied on other technology nodes.

在用于MOS晶体管热辅助恢复的原位加热器上已报告了初步结果，并在28纳米全耗尽绝缘体上硅（FD-SOI）超薄体和埋入氧化物（UTBB）高k金属栅极中得到了证明CMOS技术。这种方法在于对MOS器件的源进行功能化。我们证明，可以利用在两个分离的源触点之间流动的电流来加热设备。在晶圆级对结构进行电学和温度测量。此外，3D TCAD电热仿真评估了这一概念。源极和栅极的热敏电阻校准在低和高V _T上执行具有薄和厚的高k金属栅极氧化物的NMOS器件。通过在100 ns范围内的电扫描进入分离源触点，我们已经成功地在晶片级的几个样品上重现了IV响应。测量了从室温到+300 K的局部温度变化效应。最后，这项第一项研究表明，热回收效率很高，为新的创新解决方案打开了大门，并且可以应用于其他技术节点。