Vertical heterojunction Ge_0.92Sn_0.08/Ge gate-all-around (GAA) nanowire pMOSFETs fabricated with a top-down approach are reported. With optimized processes, pFETs with nanowire diameters as small as 32 nm were achieved and a decent I_ON/I_OFF ratio of ~3 × 10⁶ was obtained thanks to the GAA nanowire geometry, the GeSn/Ge heterostructure and NiGeSn metallization. A compensating effect between top source resistance and diameter-related electrostatics was identified for pFETs without NiGeSn source. Devices with NiGeSn source showed significant improved I_ON, I_ON/I_OFF ratio and subthreshold swing (SS) characteristics compared with those without NiGeSn.

报告了采用自顶向下方法制造的垂直异质结Ge _0.92 Sn _0.08 / Ge环栅（GAA）纳米线pMOSFET。通过优化的工艺，得益于GAA纳米线的几何形状，GeSn / Ge异质结构和NiGeSn金属化，获得了纳米线直径小至32 nm的pFET，并获得了约3×10 ⁶的不错的I _ON / I _OFF比。对于没有NiGeSn源的pFET，确定了顶部源电阻与直径相关的静电之间的补偿作用。使用NiGeSn源的设备显示I _ON，I _ON / I _OFF显着提高 与不使用NiGeSn的情况相比，比率和亚阈值摆幅（SS）特性。