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Photoluminescence of Dy3+ and Dy2+ in NaMgF3:Dy: A potential infrared radiophotoluminescence dosimeter
Radiation Measurements ( IF 2 ) Pub Date : 2020-06-01 , DOI: 10.1016/j.radmeas.2020.106326
J.J. Schuyt , G.V.M. Williams

Abstract Infrared-emitting radiophotoluminescence centres were observed in NaMgF3:Dy in the form of stable Dy2+ ions that formed only after exposure to ionising radiation. Prior to irradiation, only Dy3+ luminescence could be seen. During radiation exposure, energetic electrons were captured by Dy3+ to form Dy2+, and the Dy2+ electron trap was approximately 3 eV deep and stable at room temperature. The large trap depth allowed for non-destructive probing of the Dy2+ photoluminescence via excitation into the lowest energy 5d state at 640 nm. Exciting into higher energy states at 340 nm resulted in ionisation of the trapped electrons, restoring the radiation-induced Dy2+ to Dy3+, and demonstrated that the material can be optically reset. The intraconfigurational 4f10 transitions of Dy2+ were compared with those of the isoelectronic Ho3+ ion in similar host compounds and attributed to specific transitions in all cases. The infrared radiophotoluminescence can potentially be used for real-time fibre optic dosimetry, as the Cherenkov component is significantly lower in the infrared when compared to emissions in the visible region.

中文翻译:

NaMgF3:Dy 中 Dy3+ 和 Dy2+ 的光致发光:一种潜在的红外辐射光致发光剂量计

摘要 在 NaMgF3:Dy 中观察到红外发射辐射光致发光中心以稳定的 Dy2+ 离子形式存在,该离子仅在暴露于电离辐射后形成。在辐照之前,只能看到 Dy3+ 发光。在辐射暴露期间,高能电子被 Dy3+ 捕获形成 Dy2+,Dy2+ 电子陷阱深约 3 eV,并且在室温下稳定。大陷阱深度允许通过激发到 640 nm 的最低能量 5d 状态对 Dy2+ 光致发光进行非破坏性探测。在 340 nm 激发到更高的能量状态导致被捕获电子的电离,将辐射诱导的 Dy2+ 恢复为 Dy3+,并证明该材料可以光学复位。将 Dy2+ 的构型内 4f10 跃迁与类似主体化合物中的等电子 Ho3+ 离子的跃迁进行比较,并在所有情况下归因于特定跃迁。红外辐射光致发光可潜在地用于实时光纤剂量测定,因为与可见光区域的发射相比,红外线中的切伦科夫分量要低得多。
更新日期:2020-06-01
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