Abstract This paper presents the study of various charge neutralization methods to prevent copper corrosion on post-FIB wet stained sample. Conventional fast and economic wet staining on post-FIB copper processed sample can sometimes cause unwanted artifact such as copper corrosion due to build-up of charges on non-grounded, long copper interconnect structures during FIB milling. Some charge neutralization methods such as probe-pin grounding, conductive paint application and UV treatment were investigated on an ET structure. The recommended method, using UV treatment, is applied to the die area on a bulk Si wafer and on a SOI (Si-on-insulator) wafer to compare the effect of this method in preventing the copper corrosion effect.

中文翻译：

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使用紫外线电荷中和法防止 FIB 后湿染色样品上的铜腐蚀

摘要 本文介绍了各种电荷中和方法的研究，以防止 FIB 后湿染色样品上的铜腐蚀。在 FIB 后铜处理的样品上进行传统的快速和经济的湿染色有时会导致不需要的伪影，例如由于在 FIB 铣削过程中在非接地的长铜互连结构上积聚电荷而导致的铜腐蚀。在ET结构上研究了一些电荷中和方法，例如探针接地、导电涂料应用和UV处理。使用 UV 处理的推荐方法应用于体硅晶片和 SOI（绝缘体上硅）晶片上的芯片区域，以比较该方法在防止铜腐蚀方面的效果。