In this work, the charge retention properties of the thermal ALD-Al 2 O 3 trapping layer with metal-oxide-oxide-oxide-silicon (MOOOS) gate stack have been investigated for non-volatile memory application. The precursor gas concentrations were changed to engineer the band gap of the Al x O y trapping layer and the effect of Al x O y post-deposition annealing on charge retention properties was studied. The Al 2 O 3 layer with trimethyl aluminum (TMA): H 2 O gas flow ratio of 1:1 and deposition pulse time of 1 s per each cycle showed the band gap of 4.49 eV , which is suitable for charge trapping layer. The memory retention properties of the ALD-Al 2 O 3 MOOOS device was investigated by performing high-frequency capacitance-voltage measurement and compared to the device having a SiN x charge trapping layer. The 10 nm Al x O y trapping layer showed the...

中文翻译：

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改善非易失性存储器应用中ALD-Al x O y电荷陷阱层的保留特性

在这项工作中，具有非易失性存储器应用的金属氧化物-氧化物-氧化物-硅（MOOOS）栅叠层的热ALD-Al 2 O 3俘获层的电荷保留特性已得到研究。改变前驱物气体的浓度以设计Al x O y捕获层的带隙，并研究了Al x O y沉积后退火对电荷保持性能的影响。每个周期的三甲基铝（TMA）：H 2 O气体流量比为1：1且沉积脉冲时间为1 s的Al 2 O 3层的带隙为4.49 eV，适用于电荷俘获层。通过执行高频电容-电压测量研究了ALD-Al 2 O 3 MOOOS器件的存储保留特性，并将其与具有SiN x电荷俘获层的器件进行了比较。