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Erratum: High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator [ ECS J. Solid State Sci. Technol. [http://doi.org/10.1149/2162-8777/ab6832] , 9 , 025002 (2020) ]
ECS Journal of Solid State Science and Technology ( IF 2.2 ) Pub Date : 2020-04-26 , DOI: 10.1149/2162-8777/ab89bd Ployrung Kesorn 1 , Juan Paolo Bermundo 1 , Toshiaki Nonaka 2 , Mami N. Fujii 1 , Yasuaki Ishikawa 1 , Yukiharu Uraoka 1
ECS Journal of Solid State Science and Technology ( IF 2.2 ) Pub Date : 2020-04-26 , DOI: 10.1149/2162-8777/ab89bd Ployrung Kesorn 1 , Juan Paolo Bermundo 1 , Toshiaki Nonaka 2 , Mami N. Fujii 1 , Yasuaki Ishikawa 1 , Yukiharu Uraoka 1
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中文翻译：
勘误表：高性能非晶In-Ga-Zn-O薄膜晶体管，具有低温高k溶液处理的混合栅绝缘子[ECS J.固态科学。技术。[http://doi.org/10.1149/2162-8777/ab6832]，9，025002（2020）]
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更新日期：2020-04-26
中文翻译：
勘误表：高性能非晶In-Ga-Zn-O薄膜晶体管，具有低温高k溶液处理的混合栅绝缘子[ECS J.固态科学。技术。[http://doi.org/10.1149/2162-8777/ab6832]，9，025002（2020）]
说明不可用
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