Tin (Sn)-doped beta phase gallium oxide ( β -Ga 2 O 3 ) nanostructures at different Sn concentrations (0 to 7.3 at%) are synthesized using a facile hydrothermal method. The Sn-doped β -Ga 2 O 3 nanostructures are characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray powder diffraction, X-ray photoelectron spectroscopy, and absorbance spectroscopy. In addition, their photocatalytic activity is evaluated by observing methylene blue degradation under ultraviolet light (254 nm) irradiation. The photocatalytic activity of the Sn-doped (0.7 at%) β -Ga 2 O 3 nanostructures is significantly enhanced compared to that of intrinsic β -Ga 2 O 3 nanostructures due to the elevated charge separation. Excessive Sn concentrations (exceeding 2.2 at%) above the solid solubility limit of the Sn in β -Ga 2 O 3

中文翻译：

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Sn掺杂β-Ga 2 O 3纳米结构的水热合成及光催化性能

采用简便的水热法合成了不同Sn浓度（0〜7.3 at％）的掺锡（Sn）的β相氧化镓（β-Ga 2 O 3）纳米结构。掺杂Sn的β-Ga 2 O 3纳米结构的特征在于使用扫描电子显微镜，透射电子显微镜，能量色散X射线光谱，X射线粉末衍射，X射线光电子光谱和吸收光谱。另外，通过观察在紫外光（254nm）照射下的亚甲基蓝降解来评价它们的光催化活性。相比于固有的β-Ga 2 O 3纳米结构，Sn掺杂的（0.7 at％）β-Ga 2 O 3纳米结构的光催化活性由于提高的电荷分离而显着增强。锡浓度过高（超过2）。