Abstract Emulating neural activities at individual synapse level has recently attracted tremendous attention. Here, we demonstrate design and fabrication of the first digitally aligned nanowire (NW)-based three-terminal synaptic transistor. The highly-aligned and individually-position-controlled long continuous indium zinc oxide (IZO) NW arrays were directly printed on a large area with low cost using a special electrohydrodynamic nanowire printing (e-NWP) process. The NWs printed by e-NWP with a diameter of 250 nm emulated the structure of nerve fibers. The device emulates plasticity of biological synapses and showed remarkable advantages in energy consumption compared with previous reports. Unique band-edge modulation along the NW axial direction underlies makes excellent electrical properties of the device. This approach paves the way to easy fabrication of printed-NW-based artificial neural networks.

中文翻译：

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高度对齐的氧化铟锌纳米线基人工突触，能耗低

摘要 在个体突触水平模拟神经活动最近引起了极大的关注。在这里，我们展示了第一个基于数字对齐纳米线 (NW) 的三端突触晶体管的设计和制造。使用特殊的电流体动力学纳米线印刷 (e-NWP) 工艺，将高度对齐和单独位置控制的长连续氧化铟锌 (IZO) NW 阵列以低成本直接印刷在大面积上。e-NWP 打印的直径为 250 nm 的 NW 模拟了神经纤维的结构。该装置模拟了生物突触的可塑性，与之前的报道相比，在能耗方面表现出显着优势。独特的沿 NW 轴向的带边调制使器件具有优异的电气性能。