Abstract We report the growth of 4 mm diameter × 50 mm long Boron Carbide (B4C) with large single crystal regions using a Laser Diode Floating Zone (LDFZ) method at varying growth rates of 5–20 mm/hr. These materials were grown using polycrystalline B4C as a seed. Microstructural characterization shows the presence of a significant number of twinning-boundaries along the growth direction ([0 0 1]h) oriented in the (1 2 1 0)h plane. At faster growth rates >10 mm/hr, the crystal orientation was reproducible, suggesting a twin-plane mediated growth mechanism. On the contrary, at slower growth rates

中文翻译：

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激光二极管浮区法生长高纯区域精制碳化硼单晶

摘要 我们报告了使用激光二极管浮区 (LDFZ) 方法以 5–20 mm/hr 的不同生长速率生长具有大单晶区域的 4 mm 直径 × 50 mm 长碳化硼 (B4C)。这些材料是使用多晶 B4C 作为种子生长的。微观结构表征显示沿生长方向 ([0 0 1]h) 存在大量孪晶边界，取向为 (1 2 1 0)h 平面。在大于 10 毫米/小时的较快生长速率下，晶体取向是可重复的，表明存在双平面介导的生长机制。相反，在较慢的增长率下