A silicon carbide derived carbon (SiC-DC) with a high specific surface area (SSA) fabricated by chlorination of a silicon carbide derived from polysiloxane was activated by CO₂. The effect of activation temperature and time on the microstructure of the activated samples was investigated by N₂ sorption, XRD, SEM and TEM. Results showed that CO₂ activation effectively changed the pore structure of the SiC-DC and had little impact on carbon crystallinity. The activated samples retained the morphology of the SiC powder or the non-activated SiC-DC. The SSA, total pore volume (V_tot) and micropore volume of the activated SiC-DCs all increased and the yield decreased with increasing activation temperature or time. The SSA and Vtot increased by 46.5 % (from 1 316.8 to 1 929.0 m²g⁻¹) and 86.4 % (from 0.560 to 1.044 cm³g⁻¹), respectively after the SiC-DC was activated at 950 °C for 2 h, mainly as a result of the increased micropore volume.

通过氯化由衍生自聚硅氧烷的碳化硅制造的具有高比表面积（SSA）的碳化硅衍生碳（SiC-DC）被CO ₂活化。通过N ₂吸附，XRD，SEM和TEM研究了活化温度和时间对活化样品微观结构的影响。结果表明，CO ₂活化有效地改变了SiC-DC的孔结构，对碳的结晶度影响很小。活化的样品保留了SiC粉末或未活化的SiC-DC的形态。SSA，总孔体积（V _tot）和活化的SiC-DC的微孔体积均随活化温度或活化时间的增加而增加而产率降低。在950°C下将SiC-DC激活2后，SSA和Vtot分别增加了46.5％（从1316.8增加到1929.0 m ² g ^-1）和86.4％（从0.560增加到1.044 cm ³ g ^-1） h，主要是由于增加了微孔体积。