The search for new 2D semiconductors with large electronic bandgap and high optoelectronic performance is pivotal for fundamental research, as such materials may lead to the scalable fabrication of optoelectronics devices. However, air‐stable 2D semiconductors with superior optoelectronic performance remain elusive at present. Herein, the discovery of ZnIn₂S₄ 2D semiconductor is reported, which demonstrates an attractive thickness‐dependent direct bandgap of about 2 eV. ZnIn₂S₄ also exhibits excellent air stability and good optoelectronic performance, making it a promising material base for investigation of new quantum phenomena as well as for applications in the semiconductor industry.

中文翻译：

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空气稳定宽带隙2D半导体ZnIn2S4

寻找具有大电子带隙和高光电性能的新型2D半导体对于基础研究至关重要，因为此类材料可能导致可扩展的光电器件制造。但是，目前仍难以获得具有出色光电性能的空气稳定型2D半导体。在此，据报道发现了ZnIn ₂ S ₄ 2D半导体，这证明了约2 eV的有吸引力的厚度依赖性直接带隙。ZnIn ₂ S ₄还具有出色的空气稳定性和良好的光电性能，使其成为研究新的量子现象以及在半导体工业中应用的有前途的材料基础。